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SPIN-POLARIZED BAND-STRUCTURE DETERMINATION OF THE SI2 MOLECULAR GROUND STATE BY THE METHOD OF FULL-POTENTIAL LINEARIZED AUGMENTED PLANE WAVESWEINERT M; WIMMER E; FREEMAN AJ et al.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 47; NO 10; PP. 705-708; BIBL. 15 REF.Article

BASIS SET EFFECTS ON SPECTROSCOPIC CONSTANTS FOR C2 AND SI2 AND THE SYMMETRY DILEMMA IN THE XALPHA MODELDUNLAP BI; MEI WN.1983; JOURNAL OF CHEMICAL PHYSICS; ISSN 0021-9606; USA; DA. 1983; VOL. 78; NO 8; PP. 4997-5003; BIBL. 35 REF.Article

THEORETICAL PREDICTION OF THE POTENTIAL CURVES FOR THE LOWEST-LYING STATES OF THE CSI+ AND SI2+ MOLECULAR IONSBRUNA PJ; PETRONGOLO C; BUENKER RJ et al.1981; J. CHEM. PHYS.; ISSN 0021-9606; USA; DA. 1981; VOL. 74; NO 8; PP. 4611-4620; BIBL. 17 REF.Article

THEORETICAL PREDICTION OF THE POTENTIAL CURVES FOR THE LOWESTLYING STATES OF THE ISOVALENT DIATOMICS CN+, SI2, SIC, CP+, AND SIN+ USING THE AB INITIO MRD-CI METHODBRUNA PJ; PEYERI MHOFF SD; BUENKER RJ et al.1980; J. CHEM. PHYS.; ISSN 0021-9606; USA; DA. 1980; VOL. 72; NO 10; PP. 5437-5445; BIBL. 38 REF.Article

THE ABSORPTION SPECTRUM OF SI2-A NEW SINGLET TRANSITIONDUBOIS I; LECLERCQ H.1981; J. PHYS. B; ISSN 0022-3700; GBR; DA. 1981; VOL. 14; NO 16; PP. 2807-2812; BIBL. 10 REF.Article

MOLECULAR FORCE FIELD CALCULATIONS BY THE MINDO/3 METHODSILVI B.1979; J. CHIM. PHYS. PHYS.-CHIM. BIOL.; FRA; DA. 1979; VOL. 76; NO 1; PP. 21-25; ABS. FRE; BIBL. 57 REF.Article

A SOLID-STATE APPROACH TO SCF XALPHA MOLECULAR EQUATIONS.HO KM; COHEN ML; SCHLUTER M et al.1977; CHEM. PHYS. LETTERS; NETHERL.; DA. 1977; VOL. 46; NO 3; PP. 608-610; BIBL. 7 REF.Article

SCF-XALPHA -SW ELECTRON DENSITIES WITH THE OVERLAPPING SPHERE APPROXIMATIONMCMASTER BN; SMITH VH JR; SALAHUB DR et al.1982; MOL. PHYS.; ISSN 0026-8976; GBR; DA. 1982; VOL. 46; NO 3; PP. 449-469; BIBL. 28 REF.Article

SECOND ROW MOLECULAR ORBITAL CALCULATIONS. MINIMAL AND MINIMAL+3D BASIS CALCULATIONS ON SECOND ROW DIATOMICS.MARSH FJ; GORDON MS.1977; CHEM. PHYS. LETTERS; NETHERL.; DA. 1977; VOL. 45; NO 2; PP. 255-260; BIBL. 24 REF.Article

AB INITIO EFFECTIVE POTENTIALS FOR SILICON.REDONDO A; GODDARD WA III; MCGILL TC et al.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 15; NO 10; PP. 5038-5048; BIBL. 19 REF.Article

VIBRATIONAL POTENTIALS AND STRUCTURES IN MOLECULAR AND SOLID CARBON, SILICON, GERMANIUM, AND TIN.ANDERSON AB.1975; J. CHEM. PHYS.; U.S.A.; DA. 1975; VOL. 63; NO 10; PP. 4430-4436; BIBL. DISSEM.Article

RELIABILITY OF PSEUDOPOTENTIAL CHARGE DENSITIESSCHLUTER M; ZUNGER A; KERKER G et al.1979; PHYS. REV. LETTERS; USA; DA. 1979; VOL. 42; NO 8; PP. 540-543; BIBL. 15 REF.Article

COMPARISON OF CHARGE DENSITIES AND PSEUDO CHARGE DENSITIES FOR SI2.MILLER DJ; HANEMAN D; BAERENDS EJ et al.1978; PHYS. REV. LETTERS; USA; DA. 1978; VOL. 41; NO 3; PP. 197-200; BIBL. 19 REF.Article

SICO, SIN2 AND SI(CO)2 MOLECULES: ELECTRON SPIN RESONANCE AND OPTICAL SPECTRA AT 4 K.LEMBKE RR; FERRANTE RF; WELTNER W JR et al.1977; J. AMER. CHEM. SOC.; U.S.A.; DA. 1977; VOL. 99; NO 2; PP. 416-423; BIBL. 37 REF.Article

THE ACCURACY OF FIRST-ORDER DENSITY MATRICES OBTAINED BY ELECTRONIC STRUCTURE METHODS INVOLVING THE VALENCE ELECTRONS ONLY.EUWEMA RN; KAHN LR.1977; J. CHEM. PHYS.; U.S.A.; DA. 1977; VOL. 66; NO 1; PP. 306-309; BIBL. 10 REF.Article

A SYSTEMATIC PREPARATION OF NEW CONTRACTED GAUSSIAN-TYPE ORBITAL SETS. VI: AB INITIO CALCULATION ON MOLECULES CONTAINING NA THROUGH CLSAKAI Y; TATEWAKI H; HUZINAGA S et al.1981; J. COMPUT. CHEM.; ISSN 0192-8651; USA; DA. 1981; VOL. 2; NO 1; PP. 108-125; BIBL. 11 REF.Article

ATOMIC AND CLUSTER ION EMISSION FROM SILICON IN SECONDARY-ION MASS SPECTROMETRY. I: SIN AND SINOR IONSRICHTER CE; TRAPP M.1981; INT. J. MASS SPECTROM. ION PHYS.; ISSN 0020-7381; NLD; DA. 1981; VOL. 38; NO 1; PP. 21-33; BIBL. 35 REF.Article

OPTICAL ABSORPTION OF MATRIX ISOLATED SI AND GE CLUSTERSMARTIN TP; SCHABER H.1979; Z. PHYS. B; ISSN 0340-224X; DEU; DA. 1979; VOL. 35; NO 1; PP. 61-65; BIBL. 16 REF.Article

MULTIPLET STRUCTURE AND CHARGE DISTRIBUTIONS IN SILICON AND GERMANIUM DIMERSHARRIS J; JONES RO.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 5; PP. 2159-2166; BIBL. 27 REF.Article

POTENTIAL ENERGY CURVES AND TRANSITION MOMENTS FOR THE LOW-LYING ELECTRONIC STATES OF THE SI2 MOLECULEPEYERIMHOFF SD; BUENKER RJ.1982; CHEMICAL PHYSICS; ISSN 0301-0104; NLD; DA. 1982; VOL. 72; NO 1-2; PP. 111-188; BIBL. 14 REF.Article

METHODE DE LA FONCTIONNELLE DENSITE ELECTRONIQUE POUR LE CALUL DES SYSTEMES MOLECULAIRESGADIYAK GV; MOROKOV YU N; MUKHACHEV AG et al.1981; Z. STRUKT. HIM.; ISSN 0136-7463; SUN; DA. 1981; VOL. 22; NO 5; PP. 36-40; BIBL. 17 REF.Article

ELECTRON DENSITY IN SI2 AND CL2MROZEK J; SMITH VH JR; SALAHUB DR et al.1980; MOL. PHYS.; ISSN 0026-8976; GBR; DA. 1980; VOL. 41; NO 3; PP. 509-517; BIBL. 15 REF.Article

THE APPLICATION OF AN ATOMIC EFFECTIVE POTENTIAL TO THE ELECTRONIC STRUCTURE AND BONDING OF SI2MOSKOWITZ JW; TOPIOL S; SNYDER LC et al.1980; J. CHEM. PHYS.; ISSN 0021-9606; USA; DA. 1980; VOL. 73; NO 2; PP. 881-886; BIBL. 15 REF.Article

PROPRIETES ELECTRONIQUES DE PETITS AGREGATS METALLIQUES. APPLICATION A L'EMISSION IONIQUE SECONDAIRE.LELEYTER M.1975; AO-CNRS-13286; FR.; DA. 1975; PP. (208P.); H.T. 46; BIBL. 10 P.; (THESE DOCT. SCI. PHYS.; PARIS SUD ORSAY)Thesis

Simulation of silicon clusters from quantum' Langevin molecular dynamicsCHELIKOWSKY, J. R; BINGGELI, N; GLASSFORD, K. M et al.Zeitschrift für Physik. D, atoms, molecules and clusters. 1993, Vol 26, Num 1-4, pp 51-55, issn 0178-7683Conference Paper

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